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allows revenue … Oficjalne Centrum pomocy produktu YouTube, w którym można znaleźć porady i samouczki na temat korzystania z produktu, jak również odpowiedzi na najczęściej zadawane pytania. The FlexNVM can also be used as a mix of D-Flash and E-Flash (EEPROM backup). Figure 4 shows an example of where the entire FlexNVM is used as E-Flash (EEPROM backup) memory. The STM32F446xC/E devices incorporate high-speed embedded memories (Flash memory up to 512 Kbytes, up to 128 Kbytes of SRAM), up to 4 Kbytes of backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB buses and a 32-bit multi-AHB bus matrix. To access program memory above 64 KB, the Address Pointer must be larger than 16 bits. This is done by concatenating one of the address extension I/O registers (RAMPZ) with the internal Z-pointer. N operati e h ated in flash) Figure 4. Run mode supply current vs. core frequency (loop l cated in SRAM) Figure 5. VLPR mode current vs. core . Flash electrical specifications - reads Flash typically cannot operate at the full CPU frequency of a device Must introduce intentional delay to accommodate different CPU speeds Period = 1/Frequency 20ns = 1/50MHz Each access/read to a flash word takes 20ns ency is high, FLASH can be used to simulate EEPROM to reduce the cost. In this paper, a method of simulating EEPROM with FLASH is introduced, which realizes the EEPROM data modification b. byte, and can prevent the data lost by software reset or power reset. Th. l. The STM32F446xC/E devices incorporate high-speed embedded memories (Flash memory up to 512 Kbyte, up to 128 Kbyte of SRAM), up to 4 Kbytes of backup SRAM, and an extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB buses and a 32-bit multi-AHB bus matrix.